This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
+0.10
–0.05
0.40
3
+0.10
–0.06
0.16
■ Features
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1
2
(0.95) (0.95)
1.9 0.1
+0.20
2.90
–0.05
■ Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
30
1: Base
2: Emitter
3: Collector
20
V
3
50
V
JEITA: SC-59A
Mini3-G1 Package
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
Marking Symbol: R
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VEBO
VBE
Conditions
Min
30
3
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
V
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −2 mA
720
mV
Forward current transfer ratio
Transition frequency *
hFE
25
250
fT
VCB = 10 V, IE = −15 mA, f = 200 MHz 800
1 300 1600
0.8
MHz
pF
Reverse transfer capacitance
(Common base)
Crb
VCE = 6 V, IC = 0, f = 1 MHz
Reverse transfer capacitance
(Common emitter)
Cre
VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.0
1.5
pF
Power gain
GP
VCB = 10 V, IE = −1 mA, f = 200 MHz
20
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
T
S
No-rank
800 to 1400 1000 to 1600 800 to 1600
RT RS
fT
Marking symbol
R
Product of no-rank is not classified and have no indication for rank.
Publication date: June 2006
SJC00116CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2480
Zrb IE
GP IE
NF IE
12
10
8
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
VCB = 10 V
f = 2 MHz
Ta = 25°C
VCB = 10 V
f = 100 MHz
Rg = 50 kΩ
Ta = 25°C
VCB = 10 V
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
6
4
2
0
0
− 0.1
−1
−10
− 0.1
−1
−10
−100
− 0.1
−1
−10
−100
Emitter current IE (mA)
Emitter current IE (mA)
Emitter current IE (mA)
bib gib
brb grb
bfb gfb
48
40
32
24
16
8
0
−10
−20
−30
−40
−50
−60
0
− 0.4
− 0.8
−1.2
−1.6
−2.0
−2.4
200
yfb = gfb + jbfb
VCB = 10 V
yib = gib + jbib
VCB = 10 V
yrb = grb + jbrb
VCB = 10 V
300
500
f = 200 MHz
IE = −5 mA
IE = −2 mA
f = 900 MHz
300
600
−2 mA
−5 mA
500
600
600
f = 900 MHz
500
300
−2 mA
IE = −5 mA
200
900
0
−60
0
10
20
30
40
50
−40
−20
0
20
40
−1.0 − 0.8 − 0.6 − 0.4 − 0.2
0
Input conductance gib (mS)
Forward transfer conductance gfb (mS)
Reverse transfer conductance grb (mS)
bob gob
12
10
8
yob = gob + jbob
900
VCE = 10 V
600
IE = −2 mA
−5 mA
500
6
4
300
2
f = 200 MHz
0
0
0.4
0.8
1.2
1.6
2.0
Output conductance gob (mS)
SJC00116CED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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