This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
+0.10
+0.1
–0.0
0.15
0.3
–0.05
3
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.2
■ Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
30
1: Base
2: Emitter
3:Collector
20
V
3
15
V
EIAJ: SC-70
SMini3-G1 Package
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
Marking Symbol: U
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VEBO
VBE
Conditions
Min
30
3
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
V
VCB = 6 V, IE = −1 mA
720
mV
Forward current transfer ratio *
Transition frequency
hFE
VCB = 6 V, IE = −1 mA
65
260
1.0
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
VCB = 6 V, IE = −1 mA, f = 10.7 MHz
450
650
0.8
MHz
pF
Common-emitter reverse transfer
capacitance
Cre
Power gain
GP
VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
dB
Noise figure
NF
VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
C
D
hFE
65 to 160
100 to 260
Publication date: March 2003
SJC00142BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3931
Cob VCB
GP IE
NF IE
40
30
20
10
0
12
10
8
1.2
1.0
0.8
0.6
0.4
0.2
0
f = 100 MHz
Rg = 50 kΩ
Ta = 25°C
IE = 0
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
f = 1 MHz
Ta = 25°C
VCE = 10 V
6 V
6
VCE = 6 V, 10 V
4
2
0
− 0.1
−1
−10
−100
− 0.1
−1
−10
−100
0
5
10
15
20
25
30
(
)
(
)
(
)
V
Emitter current IE mA
Emitter current IE mA
Collector-base voltage VCB
bie gie
bre gre
bfe gfe
0
−1
−2
−3
−4
−5
−6
0
−20
20
16
12
8
yie = gie + jbie
10.7
25
150
yre = gre + jbre
10.7
VCE = 10 V
−4 mA
VCE = 10 V
58
−1 mA
100
100
150
−2 mA
−7 mA
−4 mA
−1 mA
−2 mA
100
58
−40
−4 mA
150
58
100
58
IE = −7 mA
−60
f = 150 MHz
IE = −7 mA
100
58
−80
100
25
4
25
−100
−120
yfe = gfe + jbfe
VCE = 10 V
f = 150 MHz
f = 10.7 MHz
0
− 0.5 − 0.4 − 0.3 − 0.2 − 0.1
0
0
20
40
60
80
100
0
3
6
9
12
15
(
)
(
)
(
)
Reverse transfer conductance gre mS
Forward transfer conductance gfe mS
Input conductance gie mS
boe goe
1.2
1.0
0.8
0.6
0.4
0.2
0
150
−2 mA
−4 mA
100
−7 mA
58
25
yoe = goe + jboe
VCE = 10 V
f = 10.7 MHz
0
0.1
0.2
0.3
0.4
0.5
(
)
Output conductance goe mS
SJC00142BED
3
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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