Philips Stereo Amplifier CGY2014TT User Manual

INTEGRATED CIRCUITS  
DATA SHEET  
CGY2014TT  
GSM/DCS/PCS power amplifier  
Product specification  
2000 Oct 16  
Supersedes data of 2000 Apr 11  
File under Integrated Circuits, IC17  
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
BLOCK DIAGRAM  
V
V
GND1  
LB  
DD1LB  
7
DD2LB  
6
8
9
13, 14  
RFI  
RFO/V  
LB  
DD3LB  
1, 10, 11, 12,  
16, 19, 20  
15  
2
n.c.  
GND  
CGY2014TT  
17, 18  
RFI  
RFO/V  
HB  
DD3HB  
3
4, 5  
FCA180  
V
V
DD1HB  
DD2HB  
Fig.1 Block diagram.  
2000 Oct 16  
3
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
PINNING  
SYMBOL  
n.c.  
PIN  
DESCRIPTION  
1
not connected  
RFIHB  
2
DCS/PCS power amplifier input  
VDD1HB  
VDD2HB  
VDD2HB  
VDD2LB  
VDD1LB  
GND1LB  
RFILB  
3
DCS/PCS first stage supply voltage  
DCS/PCS second stage supply voltage  
DCS/PCS second stage supply voltage  
GSM second stage supply voltage  
GSM first stage supply voltage  
GSM first stage ground  
4
5
6
7
8
9
GSM power amplifier input  
n.c.  
10  
not connected  
n.c.  
11  
not connected  
n.c.  
12  
not connected  
RFO/VDD3LB  
RFO/VDD3LB  
GND  
13  
GSM power amplifier output and third stage supply voltage  
GSM power amplifier output and third stage supply voltage  
ground  
14  
15  
n.c.  
16  
internal connection to ground; pin should not be connected to the board  
RFO/VDD3HB  
RFO/VDD3HB  
n.c.  
17  
DCS/PCS power amplifier output and third stage supply voltage  
18  
DCS/PCS power amplifier output and third stage supply voltage  
19  
20  
not connected  
not connected  
ground  
n.c.  
exposed die  
FUNCTIONAL DESCRIPTION  
Operating conditions  
handbook, halfpage  
The CGY2014TT is designed to meet the European  
n.c.  
1
2
3
4
5
6
7
8
9
20 n.c.  
Telecommunications Standards Institute (ETSI) GSM  
documents, the “ETS 300 577 specification”, which are  
defined as follows:  
RFI  
19 n.c.  
HB  
DD1HB  
DD2HB  
DD2HB  
DD2LB  
DD1LB  
V
V
V
V
V
18 RFO/V  
17 RFO/V  
16 n.c.  
DD3HB  
DD3HB  
ton = 570 µs  
T = 4.16 ms  
Duty cycle δ = 1/8.  
CGY2014TT  
15 GND  
14 RFO/V  
13 RFO/V  
12 n.c.  
Multislot operation can be implemented provided that the  
application circuit does not drive the IC beyond the limiting  
values.  
DD3LB  
DD3LB  
GND1  
RFI  
LB  
LB  
Power amplifier  
n.c. 10  
11 n.c.  
The GSM and DCS/PCS power amplifiers consist of three  
cascaded gain stages with an open-drain configuration.  
Each drain has to be loaded externally by an adequate  
reactive circuit which also has to be a DC path to the  
supply.  
FCA181  
Fig.2 Pin configuration.  
2000 Oct 16  
4
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
VDD  
Tj(max)  
Tstg  
PARAMETER  
positive supply voltage  
CONDITIONS  
MAX.  
5.2  
UNIT  
V
maximum operating junction temperature  
storage temperature  
150  
150  
2.0  
10  
°C  
°C  
Ptot  
total power dissipation  
note 1  
W
Pi(LB)  
Pi(HB)  
GSM input power  
dBm  
dBm  
DCS/PCS input power  
10  
Note  
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;  
see “Application Note CTT0003”.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE UNIT  
30 K/W  
Rth(j-c)  
thermal resistance from junction to case  
note 1  
Note  
1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;  
see “Application Note CTT0003”.  
DC CHARACTERISTICS  
VDD = 3.5 V; Tamb = 25 °C; general operating conditions applied; peak current values measured during burst; unless  
otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Supplies: pins VDD1LB, VDD2LB, RFO/VDD3LB, VDD1HB, VDD2HB and RFO/VDD3HB  
VDD  
positive supply voltage  
note 1  
0
3.5  
4.2  
V
IDD(LB)  
GSM positive peak supply current  
Pi(LB) = 0 dBm  
note 2  
0.5  
2
3
A
A
A
A
1.5  
1.5  
1
IDD(HB)  
DCS/PCS positive peak supply current  
Pi(HB) = 3 dBm  
note 3  
2
0.25  
Notes  
1. The supply circuit includes a (drain) MOS switch with RDSon = 40 m. The battery voltage is 3.6 V (typical value).  
2. No RF input signal or Pi(LB) < 30 dBm; VDD = 1 V.  
3. No RF input signal or Pi(HB) < 30 dBm; VDD = 1 V.  
2000 Oct 16  
5
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
AC CHARACTERISTICS  
VDD = 3.5 V; Tamb = 25 °C; measured on the Philips demoboard (see Fig.8).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Low band: GSM power amplifier  
Pi(LB)  
input power  
2  
0
+2  
dBm  
fRF(LB)  
RF frequency range  
maximum output power  
efficiency  
880  
34.5  
50  
35  
915  
MHz  
dBm  
%
Po(LB)(max)  
ηLB  
Po(LB)(min)  
NRX(LB)  
see Figs 3 and 4  
see Fig.3  
55  
minimum output power  
output noise in RX band  
VDD = 0 V; Pi(LB) = 0 dBm  
Pi(LB) = 0 dBm  
35  
dBm  
f
RF = 925 to 935 MHz  
RF = 935 to 960 MHz  
117  
129  
35  
35  
60  
dBm/Hz  
dBm/Hz  
dBc  
f
H2LB  
2nd harmonic level  
3rd harmonic level  
stability  
Pi(LB) = 0 dBm  
H3LB  
Pi(LB) = 0 dBm  
dBc  
StabLB  
Pi(LB) = 0 dBm; note 1  
dBc  
High band: DCS/PCS power amplifier; note 2  
Pi(HB)  
input power  
2
3
5
dBm  
MHz  
dBm  
%
fRF(HB)  
Po(HB)(max)  
ηHB  
Po(HB)(min)  
αHB  
RF frequency range  
maximum output power  
efficiency  
for DCS operation  
1710  
32  
38  
1785  
see Figs 5 and 6  
32.5  
40  
32  
0
see Fig.5  
minimum output power  
VDD = 0 V; Pi(HB) = 3 dBm  
VDD(LB) = 3.5 V; Pi(LB) = 0 dBm;  
dBm  
dBm  
high band isolation when  
low band is operating  
VDD(HB) = 0 V; Pi(HB) = 3 dBm;  
note 3  
NRX(HB)  
H2HB  
output noise in RX band  
2nd harmonic level  
3rd harmonic level  
stability  
Pi(HB) = 3 dBm  
Pi(HB) = 3 dBm  
Pi(HB) = 3 dBm  
Pi(HB) = 3 dBm; note 1  
121  
35  
35  
60  
dBm/Hz  
dBc  
H3HB  
dBc  
StabHB  
dBc  
Notes  
1. The device is adjusted to provide nominal load power into a 50 load. The device is switched off and a 6 : 1 load  
replaces the 50 load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees  
during a 60 seconds test period.  
2. The power amplifier can be matched to PCS and or DCS/PCS operation through optimization of the matching circuit.  
3. Isolation can be improved to 20 dBm (typical value) with a pin diode switched in the DCS output matching.  
2000 Oct 16  
6
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
Performance characteristics in GSM band  
FCA176  
FCA171  
40  
handbook, halfpage  
37  
60  
(3)  
handbook, halfpage  
P
o
η
(%)  
efficiency  
(dBm)  
30  
P
o
(dBm)  
(2)  
(1)  
(1)  
(2)  
(3)  
(3)  
(2)  
40  
35  
(1)  
output power  
20  
10  
20  
33  
0
0
31  
0
1000  
(MHz)  
1
2
3
4
V
(V)  
800  
850  
900  
950  
DD  
f
RF  
fRF(LB) = 900 MHz.  
Pi(LB) = 0 dBm.  
VDD1(LB) = 3 V.  
(1) Tamb = 85 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 20 °C.  
(1) Tamb = 85 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 20 °C.  
V
DD1(LB) = 3 V.  
VDD2(LB) = VDD3(LB) = 3.5 V.  
Pi(LB) = 0 dBm.  
VDD = VDD2(LB) = VDD3(LB)  
.
Fig.3 Output power and efficiency as a function of  
the frequency.  
Fig.4 Output power as a function of the supply  
voltage.  
Performance characteristics in DCS band  
FCA172  
FCA173  
35.5  
55  
40  
handbook, halfpage  
handbook, halfpage  
P
P
η
o
o
(dBm)  
34.5  
(dBm)  
30  
(%)  
efficiency  
(3)  
(2)  
45  
35  
25  
15  
(1)  
33.5  
32.5  
20  
(1)  
(2)  
(3)  
(3)  
(2)  
10  
0
(1)  
output power  
1750  
31.5  
1650  
1700  
1800  
1850  
(MHz)  
0
1
2
3
4
V
(V)  
DD  
f
RF  
fRF(HB) = 1750 MHz.  
Pi(HB) = 3 dBm.  
VDD1(HB) = 3 V.  
(1) Tamb = 85 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 20 °C.  
(1) Tamb = 85 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 20 °C.  
VDD1(HB) = 3 V.  
VDD2(HB) = VDD3(HB) = 3.5 V.  
Pi(HB) = 3 dBm.  
VDD = VDD2(HB) = VDD3(HB)  
.
Fig.5 Output power and efficiency as a function of  
the frequency.  
Fig.6 Output power as a function of the supply  
voltage.  
2000 Oct 16  
7
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
APPLICATION INFORMATION  
V
d23DCS  
10 nF  
TRL2  
RF DCS  
in  
n.c.  
n.c.  
1
2
3
4
5
20  
19  
18  
17  
16  
3.9 nH  
TRL1  
1 nF  
TRL3  
RFI  
n.c.  
HB  
DD1HB  
DD2HB  
V
V
V
RFO/V  
DD3HB  
V
2.7 pF  
d1DCS  
1
pF  
RF DCS  
out  
RFO/V  
DD3HB  
4.7  
pF  
3 pF  
5.6 pF  
100 pF  
(1)  
DD2HB  
n.c.  
CGY2014TT  
V
V
DD2LB  
DD1LB  
BA891  
GND  
3.3 kΩ  
6
15  
14  
13  
12  
11  
100 pF  
RFO/V  
DD3LB  
DD3LB  
Vpin  
V
7
8
d1GSM  
3.3 nH  
GND1  
1 nF  
6 pF  
RFO/V  
LB  
LB  
TRL4  
TRL5  
RFI  
n.c.  
n.c.  
RF GSM  
in  
9
100 pF  
n.c.  
RF GSM  
out  
10  
4.7 pF  
9.1 pF  
TRL6  
4 pF  
FCA174  
V
d23GSM  
56 pF  
(1) Pin 16 is internally connected to ground and should not be connected to the board.  
(2) Transmission lines:  
Thickness 0.4 mm, substrate FR4 and εr = 4.7.  
TRL1: width = 500 µm, length = 4.5 mm.  
TRL2: width = 500 µm, length = 20 mm.  
TRL3: width = 150 µm, length = 30 mm.  
TRL4: width = 500 µm, length = 4 mm.  
TRL5: width = 500 µm, length = 1.5 mm.  
TRL6: width = 500 µm, length = 13 mm.  
Fig.7 Application diagram.  
2000 Oct 16  
8
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
1 nF  
6 pF  
1 nF  
3.3 nH  
3.9 nH  
4.7 pF  
100 pF  
1 pF  
100 pF  
CGY2014TT  
4 pF  
56 pF  
10 nF  
3 pF  
4.7 pF  
9.1 pF  
BA891  
2.7 pF  
3.3 kΩ  
5.6 pF  
100 pF  
FCA175  
Dimensions: approximately 19 mm × 19 mm.  
Fig.8 Part of layout of Philips demoboard.  
9
2000 Oct 16  
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
PACKAGE OUTLINE  
HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm  
SOT527-1  
D
E
A
X
c
y
H
v
M
heathsink side  
A
E
D
h
Z
11  
20  
(A )  
3
A
2
A
E
h
A
1
pin 1 index  
θ
L
p
L
1
10  
detail X  
w
M
b
p
e
0
2.5  
scale  
5 mm  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(2)  
(1)  
UNIT  
A
A
A
b
c
D
D
E
E
e
H
L
L
p
v
w
y
Z
θ
1
2
3
p
h
h
E
max.  
8o  
0o  
0.15 0.95  
0.05 0.80  
0.30 0.20 6.6  
0.19 0.09 6.4  
4.3  
4.1  
4.5  
4.3  
3.1  
2.9  
6.6  
6.2  
0.75  
0.50  
0.5  
0.2  
mm  
1.10  
0.65  
0.25  
1.0  
0.2  
0.13  
0.1  
Notes  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
99-11-12  
00-07-12  
SOT527-1  
2000 Oct 16  
10  
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
SOLDERING  
If wave soldering is used the following conditions must be  
observed for optimal results:  
Introduction to soldering surface mount packages  
Use a double-wave soldering method comprising a  
turbulent wave with high upward pressure followed by a  
smooth laminar wave.  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “Data Handbook IC26; Integrated Circuit Packages”  
(document order number 9398 652 90011).  
For packages with leads on two sides and a pitch (e):  
– larger than or equal to 1.27 mm, the footprint  
longitudinal axis is preferred to be parallel to the  
transport direction of the printed-circuit board;  
There is no soldering method that is ideal for all surface  
mount IC packages. Wave soldering can still be used for  
certain surface mount ICs, but it is not suitable for fine pitch  
SMDs. In these situations reflow soldering is  
recommended.  
– smaller than 1.27 mm, the footprint longitudinal axis  
must be parallel to the transport direction of the  
printed-circuit board.  
Reflow soldering  
The footprint must incorporate solder thieves at the  
downstream end.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
For packages with leads on four sides, the footprint must  
be placed at a 45° angle to the transport direction of the  
printed-circuit board. The footprint must incorporate  
solder thieves downstream and at the side corners.  
Several methods exist for reflowing; for example,  
convection or convection/infrared heating in a conveyor  
type oven. Throughput times (preheating, soldering and  
cooling) vary between 100 and 200 seconds depending  
on heating method.  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Typical reflow peak temperatures range from  
215 to 250 °C. The top-surface temperature of the  
packages should preferable be kept below 220 °C for  
thick/large packages, and below 235 °C for small/thin  
packages.  
Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Manual soldering  
Wave soldering  
Fix the component by first soldering two  
diagonally-opposite end leads. Use a low voltage (24 V or  
less) soldering iron applied to the flat part of the lead.  
Contact time must be limited to 10 seconds at up to  
300 °C.  
Conventional single wave soldering is not recommended  
for surface mount devices (SMDs) or printed-circuit boards  
with a high component density, as solder bridging and  
non-wetting can present major problems.  
When using a dedicated tool, all other leads can be  
soldered in one operation within 2 to 5 seconds between  
270 and 320 °C.  
To overcome these problems the double-wave soldering  
method was specifically developed.  
2000 Oct 16  
11  
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
Suitability of surface mount IC packages for wave and reflow soldering methods  
SOLDERING METHOD  
PACKAGE  
BGA, LFBGA, SQFP, TFBGA  
WAVE  
not suitable  
REFLOW(1)  
suitable  
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS  
PLCC(3), SO, SOJ  
not suitable(2)  
suitable  
suitable  
suitable  
LQFP, QFP, TQFP  
not recommended(3)(4) suitable  
not recommended(5)  
suitable  
SSOP, TSSOP, VSO  
Notes  
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum  
temperature (with respect to time) and body size of the package, there is a risk that internal or external package  
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the  
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.  
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink  
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).  
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.  
The package footprint must incorporate solder thieves downstream and at the side corners.  
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;  
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.  
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is  
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.  
2000 Oct 16  
12  
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS  
STATUS  
DEFINITIONS (1)  
Objective specification  
Development This data sheet contains the design target or goal specifications for  
product development. Specification may change in any manner without  
notice.  
Preliminary specification Qualification  
This data sheet contains preliminary data, and supplementary data will be  
published at a later date. Philips Semiconductors reserves the right to  
make changes at any time without notice in order to improve design and  
supply the best possible product.  
Product specification  
Production  
This data sheet contains final specifications. Philips Semiconductors  
reserves the right to make changes at any time without notice in order to  
improve design and supply the best possible product.  
Note  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2000 Oct 16  
13  
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
NOTES  
2000 Oct 16  
14  
 
Philips Semiconductors  
Product specification  
GSM/DCS/PCS power amplifier  
CGY2014TT  
NOTES  
2000 Oct 16  
15  
 
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Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
Pakistan: see Singapore  
Belgium: see The Netherlands  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Brazil: see South America  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
51 James Bourchier Blvd., 1407 SOFIA,  
Tel. +359 2 68 9211, Fax. +359 2 68 9102  
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,  
Tel. +48 22 5710 000, Fax. +48 22 5710 001  
Portugal: see Spain  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
Romania: see Italy  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
Colombia: see South America  
Tel. +65 350 2538, Fax. +65 251 6500  
Czech Republic: see Austria  
Slovakia: see Austria  
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
Slovenia: see Italy  
Tel. +45 33 29 3333, Fax. +45 33 29 3905  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,  
Tel. +27 11 471 5401, Fax. +27 11 471 5398  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615 800, Fax. +358 9 6158 0920  
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427  
South America: Al. Vicente Pinzon, 173, 6th floor,  
04547-130 SÃO PAULO, SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 821 2382  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 93 301 6312, Fax. +34 93 301 4107  
Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,  
Tel. +66 2 361 7910, Fax. +66 2 398 3447  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,  
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813  
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),  
Tel. +39 039 203 6838, Fax +39 039 203 6800  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Vietnam: see Singapore  
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 3341 299, Fax.+381 11 3342 553  
For all other countries apply to: Philips Semiconductors,  
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,  
The Netherlands, Fax. +31 40 27 24825  
70  
SCA  
© Philips Electronics N.V. 2000  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
403506/02/pp16  
Date of release: 2000 Oct 16  
Document order number: 9397 750 07455  
 

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