Philips Stereo Amplifier TDA2615 User Manual

INTEGRATED CIRCUITS  
DATA SHEET  
TDA2615  
2 × 6 W hi-fi audio power amplifier  
1995 May 08  
Product specification  
Supersedes data of July 1994  
File under Integrated Circuits, IC01  
Philips Semiconductors  
 
Philips Semiconductors  
Product specification  
2 × 6 W hi-fi audio power amplifier  
TDA2615  
BLOCK DIAGRAM  
+ V  
P
7
V
A
TDA2615  
V
ref1  
20 k  
CM  
680 Ω  
V
B
1
INV1  
20 kΩ  
4
OUT1  
4 kΩ  
2
MUTE  
– V  
P
5 kΩ  
+ V  
P
V
ref3  
10 kΩ  
+ V  
P
V
+ V  
ref2  
THERMAL  
PROTECTION  
V
ref1  
3
1/2 V / GND  
P
voltage  
comparator  
V
B
10 kΩ  
– V  
A
ref2  
– V  
– V  
P
P
20 kΩ  
6
OUT2  
9
8
CM  
INV2  
680 Ω  
V
B
INV1, 2  
20 kΩ  
V
ref1  
V
A
5
MLA711  
– V  
P
Fig.1 Block diagram.  
3
1995 May 08  
 
Philips Semiconductors  
Product specification  
2 × 6 W hi-fi audio power amplifier  
TDA2615  
PINNING  
FUNCTIONAL DESCRIPTION  
The TDA2615 is a hi-fi stereo amplifier designed for mains  
fed applications, such as stereo radio and stereo TV. The  
circuit is optimally designed for symmetrical power  
supplies, but is also well-suited to asymmetrical power  
supply systems.  
SYMBOL  
PIN  
DESCRIPTION  
non-inverting input 1  
INV1  
MUTE  
12VP/GND  
OUT1  
VP  
1
2
3
4
5
6
7
8
9
mute input  
12 supply voltage or ground  
output 1  
An output power of 2 × 6 W (THD = 0.5%) can be  
delivered into an 8 load with a symmetrical power supply  
of ±12 V. The gain is internally fixed at 30 dB, thus offering  
a low gain spread and a very good gain balance between  
the two amplifiers (0.2 dB).  
supply voltage (negative)  
output 2  
OUT2  
+VP  
supply voltage (positive)  
inverting input 1 and 2  
non-inverting input 2  
INV1, 2  
INV2  
A special feature is the input mute circuit. This circuit  
disconnects the non-inverting inputs when the supply  
voltage drops below ±6 V, while the amplifier still retains its  
DC operating adjustment. The circuit features suppression  
of unwanted signals at the inputs, during switch-on and  
switch-off.  
The mute circuit can also be activated via pin 2. When a  
current of 300 µA is present at pin 2, the circuit is in the  
mute condition.  
INV1  
MUTE  
1
2
3
4
5
6
7
8
9
The device is provided with two thermal protection circuits.  
One circuit measures the average temperature of the  
crystal and the other measures the momentary  
temperature of the power transistors. These control  
circuits attack at temperatures in excess of +150 °C, so a  
crystal operating temperature of max. +150 °C can be  
used without extra distortion.  
1/2 V / GND  
P
OUT1  
V
P
TDA2615  
OUT2  
+ V  
P
With the derating value of 6 K/W, the heatsink can be  
calculated as follows:  
INV1, 2  
INV2  
at RL = 8 and VS = ±12 V, the measured maximum  
dissipation is 7.8 W.  
MLA708  
With a maximum ambient temperature of +60 °C, the  
thermal resistance of the heatsink is:  
150 60  
Rth  
=
6 = 5.5 K/W  
----------------------  
7.8  
Fig.2 Pin configuration.  
The metal tab has the same potential as pin 5.  
1995 May 08  
4
 
Philips Semiconductors  
Product specification  
2 × 6 W hi-fi audio power amplifier  
TDA2615  
LIMITING VALUES  
In accordance with the Absolute maximum System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
21  
UNIT  
±VP  
IOSM  
Ptot  
supply voltage  
55  
V
non-repetitive peak output current  
total power dissipation  
4
A
see Fig.3  
15  
W
°C  
°C  
°C  
h
Tstg  
Txtal  
Tamb  
tsc  
storage temperature range  
crystal temperature  
+150  
+150  
+150  
1
ambient operating temperature range  
short-circuit time  
25  
short-circuit to ground; note 1  
Note  
1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to  
VP = 28 V and with an internal supply resistance of RS 4 , the maximum unloaded supply voltage is limited to 32 V  
(with the load short-circuited). For symmetrical power supplies the circuit is short-circuit-proof up to VP = 21 V.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
thermal resistance from junction to case  
6
K/W  
MCD368 - 2  
16  
P
tot  
(W)  
infinite heatsink  
12  
8
4
R
= 5.5 K/W  
th-hs  
0
– 25  
0
50  
100  
150  
o
T
(
C)  
amb  
Fig.3 Power derating curve.  
1995 May 08  
5
 
Philips Semiconductors  
Product specification  
2 × 6 W hi-fi audio power amplifier  
TDA2615  
CHARACTERISTICS  
SYMBOL  
Supply  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
±VP  
IORM  
supply voltage range  
repetitive peak output current  
2.2  
12  
21  
V
A
Operating position; note 1  
±VP  
Iq(tot)  
PO  
supply voltage range  
total quiescent current  
output power  
7.5  
18  
5
12  
40  
6
21  
70  
0.2  
V
RL = ∞  
THD = 0.5%  
THD = 10%  
mA  
W
6.5  
29  
14  
40  
46  
8
W
THD  
B
total harmonic distortion  
power bandwidth  
PO = 4 W  
0.15  
%
THD = 0.5%; note 2  
20 to 20000  
Hz  
dB  
dB  
µV  
kΩ  
dB  
dB  
µA  
mV  
mV  
Gv  
voltage gain  
30  
0.2  
70  
20  
60  
70  
0.3  
30  
4
31  
1
Gv  
gain unbalance  
Vno  
noise output voltage  
input impedance  
note 3  
140  
26  
Zi  
SVRR  
αcs  
Ibias  
VGND  
V46  
supply voltage ripple rejection  
channel separation  
input bias current  
note 4  
RS = 0  
DC output offset voltage  
DC output offset voltage  
200  
150  
between two channels  
VI = 600 mV  
MUTE POSITION (AT IMUTE 300 µA)  
VO  
output voltage  
18  
40  
0.3  
9
1.0  
mV  
kΩ  
mA  
µV  
Z27  
mute input impedance  
total quiescent current  
noise output voltage  
supply voltage ripple rejection  
DC output offset voltage  
Iq(tot)  
Vno  
RL = ∞  
note 3  
note 4  
40  
70  
55  
40  
4
70  
140  
200  
150  
SVRR  
VGND  
Voff  
dB  
mV  
mV  
offset voltage with respect to  
operating position  
I2  
current if pin 2 is connected to pin 5  
6
mA  
Mute position; note 5  
±VP  
IP  
supply voltage range  
2
5.8  
40  
V
total quiescent current  
output voltage  
RL = ∞  
VI = 600 mV  
note 3  
9
30  
0.3  
70  
55  
40  
mA  
mV  
µV  
dB  
mV  
VO  
40  
1.0  
140  
Vno  
noise output voltage  
supply voltage ripple rejection  
DC output offset voltage  
SVRR  
VGND  
note 4  
200  
1995 May 08  
6
 
Philips Semiconductors  
Product specification  
2 × 6 W hi-fi audio power amplifier  
TDA2615  
SYMBOL  
Operating position; note 6  
Iq(tot) total quiescent current  
PO  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
18  
40  
6
70  
mA  
W
output power  
THD = 0.5%  
5
THD = 10%  
6.5  
29  
14  
35  
8
0.2  
31  
1
W
THD  
B
total harmonic distortion  
power bandwidth  
PO = 4 W  
0.13  
%
THD = 0.5%; note 1  
40 to 20000  
Hz  
dB  
dB  
µV  
kΩ  
dB  
dB  
Gv  
voltage gain  
30  
0.2  
70  
20  
44  
45  
Gv  
gain unbalance  
Vno  
Zi  
noise output voltage  
input impedance  
note 3  
140  
26  
SVRR  
αcs  
supply voltage ripple rejection  
channel separation  
MUTE POSITION (IMUTE 300 µA)  
VO  
output voltage  
VI = 600 mV  
note 7  
0.3  
9
1.0  
11.3  
70  
mV  
kΩ  
mA  
µV  
Z27  
Iq(tot)  
Vno  
mute input impedance  
total quiescent current  
noise output voltage  
supply voltage ripple rejection  
6.7  
18  
35  
40  
70  
44  
4
note 3  
note 4  
140  
SVRR  
Voff  
dB  
offset voltage with respect to operating  
position  
150  
mV  
I2  
current if pin 2 is connected to pin 5  
6
mA  
Notes  
1. VP = ±12 V; RL = 8 ; Tamb = 25 °C; fi = 1 kHz; symmetrical power supply IMUTE = < 30 µA (see Fig.4).  
2. The power bandwidth is measured at a maximum output power (POmax) of 3 dB.  
3. The noise output voltage (RMS value) is measured at RS = 2 k, unweighted (20 Hz to 20 kHz).  
4. The ripple rejection is measured at RS = 0 and fi = 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase  
to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at  
fi = 1 kHz.  
5. ±VP = 4 V; RL = 8 ; Tamb = 25 °C; fi = 1 kHz; symmetrical power supply (see Fig.4).  
6. VP = 24 V; RL = 8 ; Tamb = 25 °C; fi = 1 kHz; asymmetrical power supply IMUTE < 30 µA (see Fig.5).  
7. The internal network at pin 2 is a resistor divider of typical 4 kand 5 kto the positive supply rail. At the connection  
of the 4 kand 5 kresistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread  
of the zener voltage is 6.1 to 7.1 V.  
1995 May 08  
7
 
Philips Semiconductors  
Product specification  
2 × 6 W hi-fi audio power amplifier  
TDA2615  
TEST AND APPLICATION INFORMATION  
mute input  
+ V  
P
2200 µF  
2
7
680 Ω  
20 kΩ  
4
220 nF  
1
3
9
V
I
22 nF  
20 kΩ  
TDA2615  
8.2 Ω  
R
= 8 Ω  
L
20 kΩ  
100 nF  
220 nF  
V
I
6
22 nF  
680 Ω  
20 kΩ  
8
8.2 Ω  
R
= 8 Ω  
L
5
– V  
P
MLA710 - 2  
2200 µF  
Fig.4 Test and application circuit with symmetrical power supply.  
1995 May 08  
8
 
Philips Semiconductors  
Product specification  
2 × 6 W hi-fi audio power amplifier  
TDA2615  
R
V
S
P
7
V
mute input  
S
100 nF  
2200 µF  
2
680 Ω  
20 kΩ  
4
220 nF  
1
V
I
22 nF  
680 µF  
20 kΩ  
3
8.2 Ω  
R
= 8 Ω  
L
internal  
TDA2615  
100 µF  
1/2 V  
P
20 kΩ  
220 nF  
9
8
V
I
6
22 nF  
680 µF  
680 Ω  
20 kΩ  
8.2 Ω  
R
= 8 Ω  
L
5
MLA709 - 1  
Fig.5 Test and application circuit with asymmetrical power supply.  
1995 May 08  
9
 
Philips Semiconductors  
Product specification  
2 × 6 W hi-fi audio power amplifier  
TDA2615  
PACKAGE OUTLINE  
SIL9MPF: plastic single in-line medium power package with fin; 9 leads  
SOT110-1  
D
D
1
q
A
2
P
P
1
A
3
q
2
q
1
A
A
4
E
pin 1 index  
c
L
1
9
b
Q
e
Z
b
w
M
2
b
1
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
Z
max.  
A
max.  
2
(1)  
(1)  
E
UNIT  
A
A
b
b
b
c
D
D
e
L
P
P
Q
q
q
q
2
w
A
3
4
1
2
1
1
1
18.5  
17.8  
8.7 15.8 1.40 0.67 1.40 0.48 21.8 21.4 6.48  
8.0 15.4 1.14 0.50 1.14 0.38 21.4 20.7 6.20  
3.9 2.75 3.4 1.75 15.1  
3.4 2.50 3.2 1.55 14.9  
4.4  
4.2  
5.9  
5.7  
2.54  
mm  
3.7  
0.25 1.0  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
92-11-17  
95-02-25  
SOT110-1  
1995 May 08  
10  
 
Philips Semiconductors  
Product specification  
2 × 6 W hi-fi audio power amplifier  
TDA2615  
been pre-heated, forced cooling may be necessary  
SOLDERING  
immediately after soldering to keep the temperature within  
the permissible limit.  
Plastic single in-line packages  
BY DIP OR WAVE  
REPAIRING SOLDERED JOINTS  
The maximum permissible temperature of the solder is  
260 °C; this temperature must not be in contact with the  
joint for more than 5 s. The total contact time of successive  
solder waves must not exceed 5 s.  
Apply the soldering iron below the seating plane (or not  
more than 2 mm above it). If its temperature is below  
300 °C, it must not be in contact for more than 10 s; if  
between 300 and 400 °C, for not more than 5 s.  
The device may be mounted up to the seating plane, but  
the temperature of the plastic body must not exceed the  
specified storage maximum. If the printed-circuit board has  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1995 May 08  
11  
 
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SCD39  
© Philips Electronics N.V. 1995  
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513061/1500/03/pp12  
Date of release: 1995 May 08  
9397 750 00122  
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Document order number:  
Philips Semiconductors  
 

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