Philips Switch PIP3207 DC User Manual

Philips Semiconductors  
Product specification  
TOPFET dual high side switch  
PIP3207-DC  
DESCRIPTION  
QUICK REFERENCE DATA  
Monolithic dual channel high side  
protected power switch in  
TOPFET2 technology assembled in  
a 7 pin plastic surface mount  
package.  
SYMBOL  
PARAMETER  
MIN.  
UNIT  
IL  
Nominal load current (ISO)  
8
A
SYMBOL  
PARAMETER  
MAX.  
UNIT  
APPLICATIONS  
VBG  
IL  
Continuous off-state supply voltage  
Continuous load current  
Continuous junction temperature  
On-state resistance, Tj = 25˚C  
50  
16  
150  
40  
V
A
˚C  
m  
General purpose switch for driving  
lamps, motors, solenoids, heaters.  
Tj  
RON  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Vertical power TrenchMOS  
Low on-state resistance  
CMOS logic compatible  
Very low quiescent current  
Overtemperature protection  
Load current limiting  
INPUT 1  
BATT  
INPUT 2  
Overload and  
short circuit protection  
Self resetting overcurrent  
protection  
STATUS  
LOAD 1  
CONTROL &  
Overvoltage and undervoltage  
shutdown with hysteresis  
Off-state open circuit  
PROTECTION  
CIRCUITS  
load detection  
Diagnostic status indication  
Voltage clamping for turn off  
of inductive loads  
ESD protection on all pins  
Reverse battery, overvoltage  
and transient protection  
LOAD 2  
GROUND  
RG  
Fig.1. Elements of the TOPFET dual HSS with internal ground resistor.  
PINNING - SOT427  
PIN CONFIGURATION  
SYMBOL  
PIN  
DESCRIPTION  
mb  
1
2
3
4
5
6
7
load 1  
B
ground  
I1  
I2  
L1  
L2  
input 1  
DUAL  
HSTF  
connected to mb  
status  
S
G
input 2  
load 2  
1 2 3 4 5 6 7  
mb battery  
Fig. 2.  
Fig. 3.  
CONVENTION  
Positive currents flow into pins, except for load and ground pins.  
September 2001  
1
Rev 1.100  
 
Philips Semiconductors  
Product specification  
TOPFET dual high side switch  
PIP3207-DC  
THERMAL CHARACTERISTIC  
SYMBOL PARAMETER  
Thermal resistance1  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Junction to mounting base  
per channel  
both channels  
-
-
2.4  
1.2  
3
1.5  
K/W  
K/W  
STATIC CHARACTERISTICS  
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
Clamping voltages  
Battery to ground  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VBG  
VBL  
VGL  
IG = 1 mA  
45  
50  
18  
20  
55  
55  
23  
25  
65  
65  
28  
30  
V
V
V
V
Battery to load per channel  
Ground to load2  
IL = IG = 1 mA  
IL = 10 mA  
IL = 10 A; tp = 300 µs  
Supply voltage  
Operating range3  
battery to ground  
-
VBG  
5.5  
-
35  
V
Currents  
Total quiescent current4  
9 V VBG 35 V  
VLG = 0 V  
IB  
IL  
-
-
-
20  
1
µA  
µA  
µA  
µA  
mA  
mA  
A
T
mb = 25˚C  
mb = 25˚C  
0.1  
-
Off-state load current per  
channel  
VBL = VBG  
-
10  
1
T
-
0.1  
1.8  
3.6  
-
IG  
Operating current  
one channel on  
-
3
both channels on  
VBL = 0.5 V; Tmb = 85˚C  
-
6
IL  
Nominal load current5  
8
-
RG  
Effective internal ground  
resistance6  
IG = -200 mA; tp = 300 µs  
tp7  
40  
75  
100  
Resistances per channel  
VBG  
IL  
Tj  
RON  
RON  
On-state resistance  
9 to 35 V 10 A 300 µs 25˚C  
-
-
-
-
30  
60  
40  
80  
mΩ  
mΩ  
mΩ  
mΩ  
150˚C  
On-state resistance  
5.5 V  
5 A  
300 µs 25˚C  
50  
60  
150˚C  
100  
120  
1 Of the output Power MOS transistors.  
2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage  
is clamped by the device.  
3 On-state resistance is increased if the supply voltage is less than 7 V.  
4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.  
5 Per channel but with both channels conducting. Defined as in ISO 10483-1.  
6 Equivalent of the parallel connected resistors for both channels.  
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.  
September 2001  
3
Rev 1.100  
 
Philips Semiconductors  
Product specification  
TOPFET dual high side switch  
PIP3207-DC  
INPUT CHARACTERISTICS  
5.5 V VBG 35 V. Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25˚C unless otherwise stated.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
II  
Input current  
VIG = 5 V  
20  
5.5  
-
60  
7
160  
8.5  
3
µA  
V
VIG  
Input clamping voltage  
Input turn-on threshold voltage  
Input turn-off threshold voltage  
Input turn-on hysteresis  
Input turn-on current  
II = 200 µA  
VIG(ON)  
VIG(OFF)  
VIG  
II(ON)  
II(OFF)  
2.1  
1.8  
0.3  
-
V
1.2  
0.15  
-
-
V
0.5  
100  
-
V
VIG = 3 V  
µA  
µA  
Input turn-off current  
VIG = 1.2 V  
12  
-
OPEN CIRCUIT DETECTION CHARACTERISTICS  
An open circuit load on either channel can be detected in the off-state. Refer to TRUTH TABLE.  
This feature requires external load pull-up to a positive supply voltage via a suitable resistor.  
Limits are at -40˚C Tmb 150˚C and typical is at Tmb = 25˚C.  
SYMBOL PARAMETER  
Open circuit detection  
Load ground threshold voltage VBG 9 V  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VLG(OC)  
IB(OC)  
1.5  
-
2.5  
0.8  
3.5  
1.5  
V
Supply quiescent current per  
OC channel  
VBG = VLG = 16 V  
mA  
open circuit detected,  
other channel off  
-IL(OC)  
Load ground current per  
channel  
VLG = 16 V  
VLG = 3.5 V  
-
-
200  
22  
300  
40  
µA  
µA  
td(OC)  
Status delay time  
input low to status low  
-
65  
100  
µs  
Application information  
Rext  
External load pull-up resistance Vext = 5 V  
per channel  
-
10  
-
kΩ  
September 2001  
4
Rev 1.100  
 
Philips Semiconductors  
Product specification  
TOPFET dual high side switch  
PIP3207-DC  
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS  
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25˚C. Refer to TRUTH TABLE.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Undervoltage  
VBG(UV)  
Low supply threshold voltage1  
2
4.2  
0.5  
5.3  
1
V
V
VBG(UV)  
Hysteresis  
0.1  
Overvoltage  
VBG(OV)  
High supply threshold voltage2  
Hysteresis  
35  
40  
1
45  
2
V
V
VBG(OV)  
0.4  
IBG(OV)  
Operating current per channel VBG > VBG(OV)  
-
1
2
mA  
OVERLOAD PROTECTION CHARACTERISTICS  
Independent protection per channel. Refer to TRUTH TABLE.  
5.5 V VBG 35 V, limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25˚C unless otherwise stated.  
SYMBOL PARAMETER  
Overload protection  
Load current limiting  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VBL = VBG; tp = 300 µs  
IL(lim)  
VBG 8 V  
VBG = 5.5 V  
18  
15  
30  
27  
42  
42  
A
A
Short circuit load protection Tmb 125˚C prior to overload3  
PD(TO)  
TDSC  
Overload power threshold  
Characteristic time  
for protection4  
100  
-
150  
200  
200  
500  
W
which determines trip time5  
µs  
Overtemperature protection  
Threshold junction temperature  
Hysteresis6  
Tj(TO)  
150  
3
170  
10  
190  
20  
˚C  
˚C  
Tj(TO)  
1 Undervoltage sensors causes each channel to switch off and reset.  
2 Overvoltage sensors causes each output channel to switch off to protect its load.  
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.  
4 Normal operation will be resumed when PD < PD(TO) and Tj < Tj(TO)  
.
5 Trip time td sc varies with overload dissipation PD according to the exponential model formula td sc TDSC / LN[ PD / PD(TO) ].  
6 After cooling below the reset temperature the channel will resume normal operation.  
September 2001  
5
Rev 1.100  
 
Philips Semiconductors  
Product specification  
TOPFET dual high side switch  
PIP3207-DC  
STATUS CHARACTERISTICS  
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.  
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25˚C unless otherwise stated. Refer to TRUTH TABLE.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VSG  
Status clamping voltage  
IS = 100 µA  
IS = 100 µA  
IS = 250 µA  
VSG = 5 V  
5.5  
7
0.7  
-
8.5  
0.9  
1.1  
10  
1
V
V
VSG(LO)  
Status low voltage  
-
-
-
-
V
IS  
Status leakage current  
-
µA  
µA  
Tmb = 25˚C  
0.1  
IS(SAT)  
Status saturation current1  
VSG = 5 V  
5
-
10  
47  
15  
-
mA  
Application information  
RS  
External pull-up resistor  
kΩ  
TRUTH TABLE  
ABNORMAL CONDITIONS  
LOAD  
OUTPUT STATUS  
INPUT  
DETECTED  
DESCRIPTION  
SUPPLY  
LOAD 1  
LOAD 2  
1
L
2
L
UV OV OC SC OT OC SC OT  
1
2
0
0
0
0
0
1
0
0
0
0
0
0
0
X
X
X
0
0
0
1
0
0
0
0
0
0
0
1
1
0
0
X
X
0
0
0
0
0
0
X
X
X
0
0
X
0
1
1
1
0
0
0
X
X
X
0
0
X
0
0
0
0
X
X
0
0
X
0
0
X
X
0
0
0
X
0
X
0
0
X
0
0
X
X
0
OFF OFF  
OFF OFF  
OFF ON  
ON OFF  
ON ON  
OFF OFF  
OFF OFF  
H
L
both off & normal  
L
L
both off, one/both OC or short to V+  
one off & OC, other on & normal  
one on & normal, other off & normal  
both on & normal  
L
H
L
L
H
H
H
H
H
H
H
H
H
H
0
H
H
H
H
L
H
X
X
X
L
0
0
X
0
X
0
supply undervoltage lockout  
supply overvoltage shutdown  
one SC shutdown  
X
X
X
1
X
X
0
OFF  
X
OFF OFF  
OFF ON  
L
one SC shutdown, other off & normal  
one SC shutdown, other on & normal  
one OT shutdown  
H
X
L
L
X
X
0
OFF  
X
L
1
OFF OFF  
OFF ON  
L
one OT shutdown, other off & normal  
one OT shutdown, other on & normal  
H
1
L
KEY TO ABBREVIATIONS  
L
H
X
0
logic low  
logic high  
don’t care  
condition not present  
condition present  
UV undervoltage  
OV overvoltage  
OC open circuit  
SC short circuit  
OT overtemperature  
1
1 For example with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to  
prevent possible interference with normal operation of the device.  
September 2001  
6
Rev 1.100  
 
Philips Semiconductors  
Product specification  
TOPFET dual high side switch  
PIP3207-DC  
SWITCHING CHARACTERISTICS  
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 per channel.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
During turn-on  
from input going high  
to 10% VL  
td on  
Delay time  
-
30  
1
-
µs  
V/µs  
dV/dton  
Rate of rise of load voltage  
30% to 70% VL  
0.5  
2
t on  
Total switching time  
to 90% VL  
-
100  
400  
µs  
During turn-off  
from input going low  
to 90% VL  
td off  
Delay time  
-
0.5  
-
20  
1
-
2
µs  
V/µs  
µs  
dV/dtoff  
t off  
Rate of fall of load voltage  
Total switching time  
70% to 30% VL  
to 10% VL  
40  
200  
CAPACITANCES  
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Csg  
Status capacitance  
per channel  
VSG = 5 V  
-
11  
15  
pF  
Cig  
Cbl  
Input capacitance  
Output capacitance  
VBG = 13 V  
VBL = 13 V  
-
-
15  
20  
pF  
pF  
265  
375  
September 2001  
7
Rev 1.100  
 
Philips Semiconductors  
Product specification  
TOPFET dual high side switch  
PIP3207-DC  
MECHANICAL DATA  
2
Plastic single-ended surface mounted package (Philips version of D -PAK);  
7 leads (one lead cropped)  
SOT427  
A
A
E
1
D
1
mounting  
base  
D
H
D
4
L
p
1
7
b
c
e
e
e
e
e
e
Q
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
D
A
A
L
H
Q
UNIT  
b
c
D
E
e
1
p
D
1
max.  
1.40  
1.27  
4.50  
4.10  
0.85  
0.60  
0.64  
0.46  
2.90 15.80 2.60  
2.10 14.80 2.20  
1.60 10.30  
1.20 9.70  
mm  
11  
1.27  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
99-06-25  
01-04-18  
SOT427  
Fig.4. SOT427 surface mounting package1, centre pin connected to mounting base.  
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.  
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.  
September 2001  
8
Rev 1.100  
 
Philips Semiconductors  
Product specification  
TOPFET dual high side switch  
PIP3207-DC  
DEFINITIONS  
DATA SHEET STATUS  
DATA SHEET  
STATUS1  
PRODUCT  
STATUS2  
DEFINITIONS  
Objective data  
Development  
This data sheet contains data from the objective specification for  
product development. Philips Semiconductors reserves the right to  
change the specification in any manner without notice  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in ordere to improve the design and supply the best possible  
product  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in  
order to improve the design, manufacturing and supply. Changes will  
be communicated according to the Customer Product/Process  
Change Notification (CPCN) procedure SNW-SQ-650A  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 2001  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
1 Please consult the most recently issued datasheet before initiating or completing a design.  
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is  
September 2001  
9
Rev 1.100  
 

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