This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1791G
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656G
■ Features
• High transition frequency fT
■ Package
• Code
• Small collector output capacitance Cob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
SSMini3-F3
• Marking Symbol: AL
• Pin Name
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
−50
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
−50
V
−5
V
−50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
PC
125
Tj
125
Storage temperature
Tstg
−55 to +125
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−50
−50
−5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
− 0.1
−100
500
µA
µA
ICEO
*
Forward current transfer ratio
hFE
200
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −10 mA, IB = −1 mA
− 0.1 − 0.3
V
fT
VCB = −10 V, IE = 2 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
250
1.5
MHz
pF
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
hFE
200 to 400
250 to 500
Publication date: May 2007
SJC00380AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 0.05
(5°)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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Consult our sales staff in advance for information on the following applications:
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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