Philips Stereo Amplifier SA5205A User Manual

INTEGRATED CIRCUITS  
SA5205A  
Wide-band high-frequency amplifier  
Product specification  
Replaces data of February 24, 1992  
1997 Nov 07  
IC17 Data Handbook  
Philip s Se m ic ond uc tors  
 
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
EQUIVALENT SCHEMATIC  
V
CC  
R1  
R2  
Q3  
V
OUT  
Q6  
Q2  
R3  
V
Q1  
Q4  
IN  
RE2  
RF1  
RE1  
Q5  
RF2  
SR00216  
Figure 2. Equivalent Schematic  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
RATING  
UNIT  
V
Supply voltage  
9
5
V
CC  
V
AC  
AC input voltage  
V
P-P  
T
A
Operating ambient temperature range  
SA grade  
-40 to +85  
780  
°C  
P
DMAX  
Maximum power dissipation,  
1, 2  
T =25°C (still-air)  
A
D package  
mW  
NOTES:  
1. Derate above 25°C, at the following rates:  
D package at 6.2mW/°C  
2. See “Power Dissipation Considerations” section.  
3
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
DC ELECTRICAL CHARACTERISTICS  
V
CC  
=6V, Z =Z =Z =50and T =25°C in all packages, unless otherwise specified.  
S
L
O
A
SA5205A  
Typ  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
Max  
Min  
5
5
8
8
V
V
V
Operating supply voltage range  
CC  
Over temperature  
Over temperature  
20  
19  
25  
25  
32  
33  
mA  
mA  
I
Supply current  
Insertion gain  
CC  
S21  
f=100MHz  
17  
19  
21  
dB  
Over temperature  
16.5  
21.5  
f=100MHz  
25  
S11  
Input return loss  
Output return loss  
Isolation  
dB  
dB  
dB  
DC - f  
12  
12  
MAX  
f=100MHz  
DC - f  
27  
S22  
S12  
MAX  
f=100MHz  
DC - f  
-25  
-18  
MAX  
t
t
Rise time  
500  
500  
450  
ps  
ps  
R
Propagation delay  
Bandwidth  
P
BW  
±0.5dB  
-3dB  
MHz  
MHz  
dB  
f
Bandwidth  
550  
MAX  
Noise figure (75)  
Noise figure (50)  
Saturated output power  
1dB gain compression  
f=100MHz  
f=100MHz  
f=100MHz  
f=100MHz  
4.8  
6.0  
dB  
+7.0  
+4.0  
dBm  
dBm  
Third-order intermodulation  
intercept (output)  
f=100MHz  
f=100MHz  
+17  
+24  
dBm  
dBm  
Second-order intermodulation  
intercept (output)  
4
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
11  
10  
9
8
7
6
5
4
3
2
1
0
–1  
–2  
–3  
–4  
–5  
–6  
35  
34  
32  
30  
o
= 25 C  
T
A
28  
26  
V
V
= 7V  
= 6V  
CC  
CC  
24  
22  
20  
V
8
= 8V  
CC  
V
= 5V  
CC  
Z
= 50  
18  
16  
O
A
o
T
= 25 C  
5
5.5  
6
6.5  
7
7.5  
8
1
2
4
6
2
2
4
6
8
3
10  
10  
10  
SR00218  
SUPPLY VOLTAGE—V  
SR00217  
FREQUENCY—MHz  
Figure 3. Supply Current vs Supply Voltage  
Figure 7. Saturated Output Power vs Frequency  
10  
9
8
7
6
5
4
3
2
9
V
8V  
CC =  
Z
T
= 50Ω  
= 25 C  
O
A
V
6V  
8
7
6
5
CC =  
o
v
= 8v  
cc  
cc  
cc  
v
v
= 7v  
= 6v  
V
7V  
V
5V  
CC =  
CC =  
1
0
–1  
v
= 5v  
cc  
–2  
Z
= 50Ω  
= 25 C  
O
–3  
–4  
–5  
–6  
o
T
A
1
2
4
6
8
2
2
4
6
8
3
1
2
4
6
8
2
2
4
6
8
3
10  
10  
10  
10  
10  
FREQUENCY—MHz  
10  
SR00220  
FREQUENCY—MHz  
SR00219  
Figure 4. Noise Figure vs Frequency  
Figure 8. 1dB Gain Compression vs Frequency  
25  
40  
v
= 8v  
cc  
= 7v  
35  
30  
25  
v
cc  
20  
15  
v
2
= 6v  
cc  
Z
= 50Ω  
= 25 C  
20  
15  
10  
v
= 5v  
O
cc  
o
T
A
Z
T
= 50Ω  
= 25 C  
O
A
o
10  
1
2
4
6
8
2
4
6
8
3
4
5
6
7
8
9
10  
10  
10  
10  
SR00221  
POWER SUPPLY VOLTAGE—V  
FREQUENCY—MHz  
SR00222  
Figure 5. Insertion Gain vs Frequency (S  
)
Figure 9. Second-Order Output Intercept vs Supply Voltage  
21  
30  
25  
o
T
= 55 C  
o
= 25 C  
A
25  
20  
T
A
20  
15  
o
T
= 85 C  
A
T
Z
= 50Ω  
= 25 C  
O
15  
10  
o
o
= 125 C  
T
A
A
V
= 8V  
CC  
Z
= 50Ω  
O
10  
5
1
2
4
6
8
2
2
4
6
8
3
4
5
6
7
8
9
10  
10  
10  
FREQUENCY—MHz  
10  
POWER SUPPLY VOLTAGE—V  
SR00223  
SR00224  
Figure 6. Insertion Gain vs Frequency (S  
)
Figure 10. Third-Order Intercept vs Supply Voltage  
21  
5
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
2.0  
10  
1.9  
o
T
= 25 C  
= 6V  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
A
CC  
–15  
V
.
V
= 6V  
CC  
–20  
–25  
Z
T
= 50Ω  
O
o
= 25 C  
A
Z
Z
= 75Ω  
O
O
= 50Ω  
–30  
1
2
4
8
2
2
4
6
8
3
10  
10  
10  
6
1
2
3
8 10  
10  
2
4
6
8 10  
2
4
6
FREQUENCY—MHz  
FREQUENCY—MHz  
SR00225  
SR00226  
Figure 11. Input VSWR vs Frequency  
Figure 14. Isolation vs Frequency (S  
)
12  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
25  
20  
v
= 8v  
cc  
= 7v  
o
v
T
= 25 C  
= 6V  
cc  
amb  
CC  
V
v
= 6v  
cc  
v
= 5v  
15  
10  
cc  
Z
Z
= 75Ω  
= 50Ω  
2
O
O
Z
T
= 75Ω  
= 25 C  
O
A
o
1
2
4
6
8
2
2
4
6
8
3
1
2
3
10  
10  
FREQUENCY—MHz  
10  
10  
4
6
8 10  
2
4
6
8 10  
FREQUENCY—MHz  
SR00227  
SR00228  
Figure 12. Output VSWR vs Frequency  
Figure 15. Insertion Gain vs Frequency (S  
)
21  
40  
35  
25  
o
T
= –55 C  
o
A
T
= 25 C  
A
30  
20  
15  
10  
OUTPUT  
25  
20  
o
T
= 85 C  
A
o
T
= 125 C  
V
Z
= 6V  
A
CC  
O
= 50Ω  
INPUT  
2
o
Z
= 75Ω  
T
= 25 C  
O
A
15  
10  
V
= 6V  
CC  
1
2
4
6
8
2
4
6
8
3
1
2
4
6
8
2
2
4
6
8
3
10  
10  
10  
10  
10  
FREQUENCY—MHz  
10  
FREQUENCY—MHz  
SR00229  
SR00230  
Figure 13. Input (S ) and Output (S ) Return Loss vs  
Figure 16. Insertion Gain vs Frequency (S  
)
11  
22  
21  
Frequency  
6
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
where R =12, V =0.8V, I =5mA and I =7mA (currents rated  
THEORY OF OPERATION  
E1  
BE  
C1  
C3  
at V =6V).  
CC  
The design is based on the use of multiple feedback loops to  
provide wide-band gain together with good noise figure and terminal  
impedance matches. Referring to the circuit schematic in Figure 17,  
the gain is set primarily by the equation:  
Under the above conditions, V is approximately equal to 1V.  
IN  
Level shifting is achieved by emitter-follower Q and diode Q which  
3
4
provide shunt feedback to the emitter of Q via R . The use of an  
1
F1  
ǒR  
Ǔ
emitter-follower buffer in this feedback loop essentially eliminates  
problems of shunt feedback loading on the output. The value of  
) RE1  
VOUT  
VIN  
F1  
(1)  
+
RE1  
R
=140is chosen to give the desired nominal gain. The DC  
F1  
which is series-shunt feedback. There is also shunt-series feedback  
due to R and R which aids in producing wideband terminal  
output voltage V  
can be determined by:  
OUT  
F2  
E2  
impedances without the need for low value input shunting resistors  
that would degrade the noise figure. For optimum noise  
V =V -(I +I )R2,(4)  
OUT CC C2 C6  
performance, R and the base resistance of Q are kept as low as  
E1  
1
possible while R is maximized.  
where V =6V, R =225, I =8mA and I =5mA.  
F2  
CC  
2
C2  
C6  
The noise figure is given by the following equation:  
NF =  
From here it can be seen that the output voltage is approximately  
3.1V to give relatively equal positive and negative output swings.  
Diode Q is included for bias purposes to allow direct coupling of  
5
R
to the base of Q . The dual feedback loops stabilize the DC  
KT  
2qlC1  
F2  
1
rb ) RE1  
)
ȡ
ȣ
ȴ
Ȥ
ȱ
ȳ
operating point of the amplifier.  
(2)  
10 log 1 )  
dB  
ȧ ȧ  
ȧȧ  
RO  
The output stage is a Darlington pair (Q and Q ) which increases  
the DC bias voltage on the input stage (Q ) to a more desirable  
value, and also increases the feedback loop gain. Resistor R  
optimizes the output VSWR (Voltage Standing Wave Ratio).  
Inductors L and L are bondwire and lead inductances which are  
6
2
Ȳ
Ȣ
1
0
where I =5.5mA, R =12, r =130, KT/q=26mV at 25°C and  
C1  
E1  
b
R =50 for a 50system and 75 for a 75system.  
0
1
2
The DC input voltage level V can be determined by the equation:  
roughly 3nH. These improve the high-frequency impedance  
matches at input and output by partially resonating with 0.5pF of pad  
and package capacitance.  
IN  
V
IN  
=V +(I +I ) R  
BE1 C1 C3 E1  
V
CC  
R2  
225  
R1  
650  
L2  
R0  
10  
V
Q3  
OUT  
3nH  
Q6  
Q2  
L2  
V
IN  
Q4  
Q1  
R3  
140  
3nH  
RF1  
140  
RE2  
12  
RE1  
12  
Q5  
RF2  
200  
SR00231  
Figure 17. Schematic Diagram  
7
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
output pins of the device. This circuit is shown in Figure 18. Follow  
these recommendations to get the best frequency response and  
noise immunity. The board design is as important as the integrated  
circuit design itself.  
POWER DISSIPATION CONSIDERATIONS  
Whenusing the part at elevated temperature, the engineer should con-  
sider the power dissipation capabilities.  
At the nominal supply voltage of 6V, the typical supply current is  
25mA (32mA Max). For operation at supply voltages other than 6V,  
see Figure 3 for I versus V curves. The supply current is  
CC  
CC  
SCATTERING PARAMETERS  
inversely proportional to temperature and varies no more than 1mA  
between 25°C and either temperature extreme. The change is 0.1%  
per over the range.  
The primary specifications for the SA5205A are listed as  
S-parameters. S-parameters are measurements of incident and  
reflected currents and voltages between the source, amplifier and  
load as well as transmission losses. The parameters for a two-port  
network are defined in Figure 19.  
The recommended operating temperature ranges are air-mount  
specifications. Better heat sinking benefits can be realized by  
mounting the D package body against the PC board plane.  
Actual S-parameter measurements using an HP network analyzer  
(model 8505A) and an HP S-parameter tester (models 8503A/B) are  
shown in Figure 20.  
PC BOARD MOUNTING  
Values for the figures below are measured and specified in the data  
sheet to ease adaptation and comparison of the SA5205A to other  
high-frequency amplifiers.  
In order to realize satisfactory mounting of the SA5205A to a PC  
board, certain techniques need to be utilized. The board must be  
double-sided with copper and all pins must be soldered to their  
respective areas (i.e., all GND and V pins on the SO package).  
CC  
The power supply should be decoupled with a capacitor as close to  
V
CC  
the V pins as possible and an RF choke should be inserted  
CC  
between the supply and the device. Caution should be exercised in  
the connection of input and output pins. Standard microstrip should  
be observed wherever possible. There should be no solder bumps  
or burrs or any obstructions in the signal path to cause launching  
problems. The path should be as straight as possible and lead  
lengths as short as possible from the part to the cable connection.  
Another important consideration is that the input and output should  
RF CHOKE  
DECOUPLING  
CAPACITOR  
5205A  
V
V
IN  
OUT  
AC  
AC  
be AC coupled. This is because at V =6V, the input is  
CC  
COUPLING  
CAPACITOR  
COUPLING  
CAPACITOR  
approximately at 1V while the output is at 3.1V. The output must be  
decoupled into a low impedance system or the DC bias on the  
output of the amplifier will be loaded down causing loss of output  
power. The easiest way to decouple the entire amplifier is by  
soldering a high frequency chip capacitor directly to the input and  
SR00232  
Figure 18. Circuit Schematic for Coupling and Power Supply  
Decoupling  
POWER REFLECTED  
FROM INPUT PORT  
S
— INPUT RETURN LOSS  
S
=
11  
11  
POWER AVAILABLE FROM  
GENERATOR AT INPUT PORT  
S
21  
REVERSE TRANSDUCER  
POWER GAIN  
S
=
S
S
— REVERSE TRANSMISSION LOSS  
OSOLATION  
12  
12  
21  
22  
S
S
22  
11  
S
=
TRANSDUCER POWER GAIN  
— FORWARD TRANSMISSION LOSS  
OR INSERTION GAIN  
21  
POWER REFLECTED  
FROM OUTPUT PORT  
S
12  
S
— OUTPUT RETURN LOSS  
S
=
22  
POWER AVAILABLE FROM  
GENERATOR AT OUTPUT PORT  
a. Two-Port Network Defined  
b.  
SR00233  
Figure 19.  
8
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
50System  
75System  
25  
20  
25  
v
= 8v  
cc  
= 7v  
v
= 8v  
v
cc  
= 7v  
cc  
v
cc  
20  
15  
v
= 6v  
cc  
v
v
2
= 6v  
cc  
= 5v  
15  
10  
cc  
v
= 5v  
cc  
Z
T
= 75Ω  
= 25 C  
O
A
Z
T
= 50Ω  
= 25 C  
O
A
o
o
10  
1
2
4
6
8
2
2
4
6
8
3
10  
10  
10  
1
2
4
6
8
2
4
6
8
3
10  
10  
10  
FREQUENCY—MHz  
FREQUENCY—MHz  
a. Insertion Gain vs Frequency (S  
)
b. Insertion Gain vs Frequency (S  
)
21  
21  
10  
10  
–15  
Z
T
= 75Ω  
= 25 C  
–15  
O
A
o
V
= 6V  
CC  
V
= 6V  
–20  
–25  
–30  
CC  
–20  
–25  
Z
T
= 50Ω  
O
o
= 25 C  
A
–30  
1
2
4
6
8
2
2
4
6
8
3
10  
1
2
4
6
8
2
2
4
6
8
3
10  
10  
10  
FREQUENCY—MHz  
10  
10  
FREQUENCY—MHz  
c. Isolation vs Frequency (S  
)
d. S Isolation vs Frequency  
12  
12  
40  
35  
30  
40  
35  
30  
OUTPUT  
OUTPUT  
INPUT  
25  
20  
25  
20  
V
= 6V  
CC  
Z
= 50Ω  
O
INPUT  
2
o
V
Z
= 6V  
CC  
T
= 25 C  
A
15  
10  
= 75Ω  
15  
10  
O
o
T
= 25 C  
A
1
2
4
6
8
2
2
4
6
8
3
10  
1
2
4
6
8
2
4
6
8
3
10  
10  
10  
10  
10  
FREQUENCY—MHz  
FREQUENCY—MHz  
e. Input (S ) and Output (S ) Return Loss  
f. Input (S ) and Output (S ) Return Loss  
11 22  
11  
22  
vs Frequency  
vs Frequency  
SR00234  
Figure 20.  
9
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
The most important parameter is S . It is defined as the square root  
of the power gain, and, in decibels, is equal to voltage gain as  
shown below:  
1dB from its low power value. The decrease is due to nonlinearities  
in the amplifier, an indication of the point of transition between  
small-signal operation and the large signal mode.  
21  
Z =Z =Z  
for the SA5205A  
The saturated output power is a measure of the amplifier’s ability to  
deliver power into an external load. It is the value of the amplifier’s  
output power when the input is heavily overdriven. This includes the  
sum of the power in all harmonics.  
D
IN OUT  
SA5205  
A
2
2
VOUT  
ZD  
VIN  
POUT  
)
PIN  
)
ZD  
Z
D
2
VOUT  
ZD  
2
INTERMODULATION INTERCEPT TESTS  
POUT  
PIN  
VOUT  
N
+
+
+ PI  
The intermodulation intercept is an expression of the low level  
linearity of the amplifier. The intermodulation ratio is the difference in  
dB between the fundamental output signal level and the generated  
distortion product level. The relationship between intercept and  
intermodulation ratio is illustrated in Figure 22, which shows product  
output levels plotted versus the level of the fundamental output for  
two equal strength output signals at different frequencies. The upper  
line shows the fundamental output plotted against itself with a 1dB to  
1dB slope. The second and third order products lie below the  
fundamentals and exhibit a 2:1 and 3:1 slope, respectively.  
2
2
VIN  
VIN  
ZD  
2
P =V  
I
I
P =Insertion Power Gain  
I
V =Insertion Voltage Gain  
I
Measured value for the  
SA5205A = |S  
2
|
= 100  
21  
The intercept point for either product is the intersection of the  
extensions of the product curve with the fundamental output.  
POUT  
2
NPI  
+
+ | S21  
|
+ 100  
PIN  
VOUT  
The intercept point is determined by measuring the intermodulation  
ratio at a single output level and projecting along the appropriate  
product slope to the point of intersection with the fundamental.  
When the intercept point is known, the intermodulation ratio can be  
determined by the reverse process. The second order IMR is equal  
to the difference between the second order intercept and the  
fundamental output level. The third order IMR is equal to twice the  
difference between the third order intercept and the fundamental  
output level. These are expressed as:  
Ǹ
and VI  
+
+
PI + S21 + 10  
VIN  
In decibels:  
2
P
=10 Log | S  
|
= 20dB  
I(dB)  
I(dB)  
21  
V
= 20 Log S = 20dB  
21  
P  
= V  
= S  
= 20dB  
I(dB)  
I(dB)  
21(dB)  
IP =P  
+IMR  
2
2
OUT  
OUT  
OUT  
Also measured on the same system are the respective voltage  
standing wave ratios. These are shown in Figure 21. The VSWR  
can be seen to be below 1.5 across the entire operational frequency  
range.  
IP =P  
3
+IMR /2  
3
where P  
is the power level in dBm of each of a pair of equal  
level fundamental output signals, IP and IP are the second and  
2
3
Relationships exist between the input and output return losses and  
the voltage standing wave ratios. These relationships are as follows:  
third order output intercepts in dBm, and IMR and IMR are the  
second and third order intermodulation ratios in dB. The  
2
3
intermodulation intercept is an indicator of intermodulation  
INPUT RETURN LOSS=S dB  
11  
performance only in the small signal operating range of the amplifier.  
Above some output level which is below the 1dB compression point,  
the active device moves into large-signal operation. At this point the  
intermodulation products no longer follow the straight line output  
slopes, and the intercept description is no longer valid. It is therefore  
S
dB=20 Log | S  
|
11  
11  
OUTPUT RETURN LOSS=S dB  
22  
S
22  
dB=20 Log | S  
|
22  
INPUT VSWR=1.5  
important to measure IP and IP at output levels well below 1dB  
2
3
OUTPUT VSWR=1.5  
compression. One must be careful, however, not to select too low  
levels because the test equipment may not be able to recover the  
signal from the noise. For the SA5205A we have chosen an output  
level of -10.5dBm with fundamental frequencies of 100.000 and  
100.01MHz, respectively.  
1dB GAIN COMPRESSION AND SATURATED  
OUTPUT POWER  
The 1dB gain compression is a measurement of the output power  
level where the small-signal insertion gain magnitude decreases  
10  
 
1997 Nov 07  
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
2.0  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
1.9  
o
T
= 25 C  
= 6V  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
A
CC  
o
T
= 25 C  
amb  
V
V
= 6V  
CC  
.
Z
Z
= 75Ω  
O
O
Z
Z
= 75Ω  
= 50Ω  
2
O
O
= 50Ω  
1
2
4
6
8
2
2
4
6
8
3
1
4
6
8
2
2
4
6
8
3
10  
10  
10  
FREQUENCY—MHz  
10  
10  
10  
FREQUENCY—MHz  
a. Input VSWR vs Frequency  
b. Output VSWR vs Frequency  
SR00235  
Figure 21. Input/Output VSWR vs Frequency  
“S-Parameter Techniques for Faster, More Accurate Network Design”,  
HP App Note 95-1, Richard W. Anderson, 1967, HP Journal.  
ADDITIONAL READING ON SCATTERING  
PARAMETERS  
For more information regarding S-parameters, please refer to  
High-Frequency Amplifiers by Ralph S. Carson of the University of  
Missouri, Rolla, Copyright 1985; published by John Wiley & Sons,  
Inc.  
“S-Parameter Design”, HP App Note 154, 1972.  
+30  
THIRD ORDER  
INTERCEPT POINT  
2ND ORDER  
INTERCEPT  
POINT  
+20  
1dB  
COMPRESSION POINT  
+10  
FUNDAMENTAL  
RESPONSE  
0
-10  
-20  
-30  
-40  
2ND ORDER  
RESPONSE  
3RD ORDER  
RESPONSE  
-60  
-50  
-40  
-30  
-20  
-10  
0
+10  
+20  
+30  
+40  
INPUT LEVEL dBm  
SR00236  
Figure 22.  
11  
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
SO8: plastic small outline package; 8 leads; body width 3.9mm  
SOT96-1  
12  
 
1997 Nov 07  
Philips Semiconductors  
Product specification  
Wide-band high-frequency amplifier  
SA5205A  
DEFINITIONS  
Data Sheet Identification  
Product Status  
Definition  
This data sheet contains the design target or goal specifications for product development. Specifications  
may change in any manner without notice.  
Objective Specification  
Formative or in Design  
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to make changes at any time without notice in order to improve design  
and supply the best possible product.  
Preliminary Specification  
Product Specification  
Preproduction Product  
Full Production  
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes  
at any time without notice, in order to improve design and supply the best possible product.  
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,  
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,  
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes  
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting  
or modification.  
LIFE SUPPORT APPLICATIONS  
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,  
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected  
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips  
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully  
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 1997  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
Philips  
Semiconductors  
 

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